- 您现在的位置：买卖IC网 > Sheet目录408 > DMP3056LDM-7 (Diodes Inc)MOSFET P-CH 30V 4.3A SOT-26
DMP3056LDM
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
± 20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Steady State
t < 10s
T A = +25 ° C
T A = +25 ° C
I D
I D
-4.3
-5.8
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
I S
I DM
-2.3
-13
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T A = +25°C
Steady State
T A = +25°C
Steady State
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
1.25
100
1.5
86
15.6
-55 to 150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-30
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
T J = +25 ° C
I DSS
I GSS
V GS(th)
R DS (ON)
g FS
V SD
?
?
-1.0
?
?
?
?
?
?
?
?
8
?
-1
± 100
± 800
-2.1
45
65
?
-1.2
μ A
nA
V
m Ω
S
V
V GS = 0V, V DS = -30V
V GS = ± 20V, V DS = 0V
V GS = ± 25V, V DS = 0V
V GS = V DS , I D = -250 μ A
V GS = -10V, I D = -5A
V GS = -4.5V, I D = -4.2A
V DS = -10V, I D = -4.3A
V GS = 0V, I S = -1.7A
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
948
105
100
?
?
?
pF
pF
pF
V GS = 0V, V DS = -25V,
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q G
Q GS
Q GD
R g
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
10.1
21.1
2.8
3.2
13.15
10.2
6.6
50.1
22.3
?
?
?
?
?
?
?
?
?
nC
nC
?
ns
V DS = -15V, V GS = -4.5V,
I D = -6A
V DS = -15V, V GS = -10V,
I D = -6A
V DS = 0V, V GS = 0V, f = 1MHz
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 Ω
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP3056LDM
Document number: DS31449 Rev. 11 - 2
2 of 6
www.diodes.com
December 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMP3056LSD-13
MOSFET P-CH 30V 6.9A 8-SOIC
DMP3056LSS-13
MOSFET P-CH 30V 7.1A 8-SOIC
DMP3098L-7
MOSFET P-CH 30V 3.8A SOT23-3
DMP3098LDM-7
MOSFET P-CH 30V 4A SOT-26
DMP3098LSD-13
MOSFET P-CH 30V 4.4A 8-SOIC
DMP3098LSS-13
MOSFET P-CH 30V 5.3A 8-SOIC
DMP3105LVT-7
MOSFET P-CH 30V 3.1A TSOT26
DMP3130L-7
MOSFET P-CH 30V 3.5A SOT-23
相关代理商/技术参数
DMP3056LDMQ-7
制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SOT26 T&R 3K - Tape and Reel
DMP3056LSD
制造商:Diodes Incorporated 功能描述:MOSFET PP CH W DIO 30V 6.9A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, PP CH, W DIO, 30V, 6.9A, SO8 制造商:Diodes Incorporated 功能描述:MOSFET, PP CH, W DIO, 30V, 6.9A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
DMP3056LSD-13
功能描述:MOSFET PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3056LSDQ-13
制造商:Diodes Incorporated 功能描述:DIODE - Tape and Reel
DMP3056LSS
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP3056LSS-13
功能描述:MOSFET PMOS SINGLE P-CHANNL 30V 7.1A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3098L
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3098L-7
功能描述:MOSFET P-Channel 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube